advanced power n-channel enhancement mode electronics corp. power mosfet ease of paralleling bv dss 500v fast switching characteristic r ds(on) 1.5 simple drive requirement i d 4.5a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice storage temperature range -55 to 150 200907281 parameter IRF830I-HF + 20 rating 500 halogen-free product 4.5 18 36.7 4.5 2.8 101 -55 to 150 1 parameter the to-220cfm isolation package is widely preferred for commercial- industrial through hole applications. g d s a pec mosfet provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 500 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =2.7a - - 1.5 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2.7a - 2.4 - s i dss drain-source leakage current v ds =500v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 3 i d =3.1a - 28 45 nc q gs gate-source charge v ds =400v - 4 - nc q gd gate-drain ("miller") charge v gs =10v - 16 - nc t d(on) turn-on delay time 3 v dd =250v - 10 - ns t r rise time i d =3.1a - 15 - ns t d(off) turn-off delay time r g =12 , v gs =10v - 41 - ns t f fall time r d =80.6 -20- ns c iss input capacitance v gs =0v - 710 1140 pf c oss output capacitance v ds =25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 2 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =4.5a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =3.1a, v gs =0 v , - 370 - ns q rr reverse recovery charge di/dt=100a/s - 3.9 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=10mh , r g =25 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 IRF830I-HF
IRF830I-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 048121620 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.5v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =2.7a v g =10v 0 1 2 3 4 5 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6 .0v 5.0v v g =4.5v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
IRF830I-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3.1a v ds =100v v ds =250v v ds =400v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
|
